Autor: |
Hermiz, Ghazala.Y., Shakouly, Suzan. M., Suhail, Mahdi. H. |
Předmět: |
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Zdroj: |
Journal of Superconductivity & Novel Magnetism; Feb2023, Vol. 36 Issue 2, p487-491, 5p |
Abstrakt: |
For Bi1.6Pb0.4Sr2Ca2Cu3-xZnxO superconductor films, the dielectric constant value at x = 0, 0.2, 0.4, and 0.6 was obtained by building a theoretical relation between the dropping off voltage that scaled during the electrical resistivity measurements using four-point probe technique with dielectric constant. The results showed that the dielectric constant has an inverse relation with the voltage due to a film's ability to concentrate electric field lines across the BiPbSrCa layer. The increment of the Zn partial substitution in the Cu site revealed a dielectric constant value decrease with the voltage, which is noted at x = 0.4 and 0.6. This may relate to the pinholes increase in the BiPbSrCaCuZnO film that covers a range of defects in the film. The pinholes' existence in the films had a direct influence on the dielectric strength of BiPbSrCaCu material. The dielectric material's conductivity correlated to the hopping transition of the defect charge carriers and was strongly annealing temperature dependent. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
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