| Autor: |
Lübbert, Daniel, Ferrari, Claudio, Mikulík, Petr, Pernot, Petra, Helfen, Lukas, Verdi, Nicola, Korytár, Dušan, Baumbach, Tilo |
| Předmět: |
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| Zdroj: |
Journal of Applied Crystallography; Feb2005, Vol. 38 Issue 1, p91-96, 6p, 5 Diagrams |
| Abstrakt: |
The method called ‘rocking-curve imaging’ (RCI) has recently been developed to visualize lattice imperfections in large crystals such as semiconductor wafers with high spatial resolution. The method is based on a combination of X-ray rocking-curve analysis and digital X-ray diffraction topography. In this article, an extension of the method is proposed by which dislocation densities in large-scale samples (semiconductor wafer crystals) can be quantified and their variation across the sample surface determined in an instrumentally simple way. Results from a nearly dislocation-free S-doped InP crystal and a semi-insulating GaAs are presented; both display a clearly non-random distribution of dislocations. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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