Elaboration and Characterization of Amorphous Silicon Carbide Thin Films (a-SiC) by Sputerring Magnetron Technique for Photoelectrochemical CO2 Conversion.

Autor: Boussaa, S. Anas, Benfadel, K., Khodja, A. Trad, Ayachi, M., Boulil, R., Bekhedda, K., Talbi, L., Boukezzata, A., Ouadah, Y., Allam, D., Maifi, L., Keffous, A., Chetoui, A., Torki, C., Boudeffar, F., Achacha, S., Manseri, A., Boutarek, N. Zaourar, Kaci, S.
Zdroj: SILICON (1876990X); Feb2023, Vol. 15 Issue 3, p1145-1157, 13p
Abstrakt: Semiconductors as photoelectric catalysis is recognized as a promising strategy for simultaneous face energy crisis and environmental pollution. In this study, amorphous silicon carbide (SiC) thin films were deposited on Si (100) by reactive direct current magnetron sputtering at room temperature of high purity silicon carbide 6H SiC target. By DRX and EPMA analysis, we confirmed the amorphous character of silicon carbide thin layers and the stoichiometric chemical composition respectively. The FTIR measurement confirms the presence of Si–C, Si–Si and Si–O bonds. The peak corresponding to Si–C was found about 777 cm−1. The optical properties were conducted and the optical gap (Eg = 2.236 eV) was determined. The electrochemical properties of amorphous silicon carbide thin films on p-Si substrate were studied and confirmed a p type electrode. By CPG analysis, the conversion of CO2 to methanol was confirmed using silicon carbide as a working electrode. Based on the found results, the SiC@Si based electrode could actually be used as a photocathode for the PEC reduction of CO2 into added value organıc components such as methanol. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index