| Autor: |
Krüger, Evgeny, Gottschalch, Volker, Benndorf, Gabriele, Hildebrandt, Ron, Pereira, Ana Lucía, Bar, Michael S., Blaurock, Steffen, Merker, Stefan, Sturm, Chris, Grundmann, Marius, Krautscheid, Harald |
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| Zdroj: |
Physica Status Solidi (B); Feb2023, Vol. 260 Issue 2, p1-7, 7p |
| Abstrakt: |
Herein, the epitaxial growth of AgxCu1−xI alloy layers and isolated small crystals on Al2O3(0001) using close distance sublimation (CDS) technique is presented. Single‐phase γ-AgxCu1−xI thin films are fabricated up to an Ag content of x≈0.5, while at higher Ag contents the β‐phase is also observed. The epitaxial relationships between the deposited AgxCu1−xI layers and the Al2O3 substrate as well as the structure type are discussed for different alloy compositions. In addition, a further approach is presented for deposition of polycrystalline single‐phase γ-AgxCu1−xI thin films for Ag contents up to x≈0.7 based on the solid‐state reaction of AgI layers on Al2O3(0001) substrate with CuI. Furthermore, for differently prepared samples it is shown that the near‐band‐edge emission at 2 K is dominated by excitonic recombination, whereas the spectral position of the emission profile can be tuned by the alloy composition. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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