Monolithic Large-Signal Transimpedance Amplifier for Use in Multi-Gigabit, Short-Range Optoelectronic Interconnect Applications.

Autor: Vilches, Antonio, Loga, Rodney, Rahal, Mouhamed, Fobelets, Kristel, Papavassiliou, Christos, Hall, Trevor J.
Zdroj: IEEE Transactions on Circuits & Systems. Part II: Express Briefs; Feb2005, Vol. 52 Issue 2, p102-106, 5p
Abstrakt: A novel large-signal transimpedance amplifier front-end, intended for monolithic integration with a Si p-i-n diode and employing ILBT-CMOS technology for use in short-range optoelectronic interconnects is proposed. Simulated bandwidth and gain are >4 Gbits/s and 43 dBΩ, respectively, while driving a 100-fF load to TTL voltage levels. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index