| Autor: |
Zalessky, V. B., Gulakov, I. R., Zenevich, A. O., Kochergina, O. V., Tsymbal, V. S. |
| Předmět: |
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| Zdroj: |
Russian Microelectronics; Dec2022, Vol. 51 Issue 7, p562-566, 5p |
| Abstrakt: |
The implementation of a data transmission technology such as Li-Fi requires photodetectors that are optically sensitive in the visible wavelength range. The best sensitivity in this wavelength range is exhibited by vacuum photomultipliers. However, they are large, have high supply voltages, and are quite fragile. Silicon photomultiplier tubes (Si-PMTs), which are characterized by good sensitivity in the visible wavelength range, are an alternative to vacuum photomultipliers. In this paper, the capacity of the optical communication channel with the information receiver in the form of an Si-PMT is studied. It is found that the highest value of the throughput corresponds to the value of the supply voltage equal to the breakdown voltage of the Si-PMT and the optical radiation wavelength of 470 nm. It is established that an increase in temperature leads to a decrease in the throughput of the photodetector, and an increase in the energy exposure of optical pulses leads to an increase in the throughput. The results obtained can be used in the development of optical communication systems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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