| Autor: |
Wu, Siyuan, Huang, Zhe, Chen, Baishan, Liu, Xiao, Lin, Ping, Ma, Yunzhu, Tang, Siwei, Liu, Wensheng |
| Předmět: |
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| Zdroj: |
Journal of Electronic Materials; Feb2023, Vol. 52 Issue 2, p1295-1304, 10p |
| Abstrakt: |
Materials with magnetic phase transitions have attracted considerable attention in magnetic storage, magnetic drive, magnetic sensor, and solid-state refrigeration applications owing to the correlated changes in their physical properties. To explore the magnetic transitions in materials with a B20 structure with potential for spintronic applications, ternary semiconductors FeSi1−xGex (x = 0.1, 0.25, 0.5, 0.75, and 0.9) were prepared. The results confirmed that the FeSi1−xGex ternary material system contains a Si-rich phase with a crystal structure matching B20 FeSi, a Ge-rich phase with a crystal structure matching B20 FeGe, and FeGe2 with a tetragonal system. Magnetic characterization revealed that the field cooling curves of FeSi0.5Ge0.5 showed several magnetic transitions near 10 K, 100 K, and 140 K. In addition, FeSi0.5Ge0.5 and FeSi0.25Ge0.75 exhibited the characteristics of a disconnected magnetic phase at certain temperature points. The splitting magnetic phase in FeSi1−xGex is related to the atom-site distortion caused by Ge doping, demonstrating that in addition to the application of a magnetic field, the magnetic phase could be easily switched "on" and "off" by several critical temperatures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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