| Autor: |
Kumar, Vibhor, Gao, Munan, Zin, Ngwe |
| Předmět: |
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| Zdroj: |
Physica Status Solidi - Rapid Research Letters; Jan2023, Vol. 17 Issue 1, p1-5, 5p |
| Abstrakt: |
The pinhole‐free silicon oxide (SiOx) layer grown using dissolved ozone in deionized water (DI‐O3) is demonstrated. An ultrathin SiOx layer of thickness 1.53 nm ± 1.5% is grown on silicon wafer using 7 ppm DI‐O3. A four‐step methodology, including 25 wt% aq. tetramethylammonium hydroxide (TMAH) solution at 80 °C, is employed to magnify the pinhole signatures in the underlying silicon and visualized with dark‐field optical microscopy (DFOM) and scanning electron microscopy (SEM). The DFOM images show spots on the surface of wafer that originate from airborne particles, contamination, etc. SEM images reveal the absence of etch pits in silicon even after etching of SiOx/silicon in TMAH for 300 s. The minority carrier lifetime and interface states density in AlOx‐capped SiOx/Si structure are ≥2 ms at carrier density of 1 × 1015 cm−3 and less than 2 × 1011 cm−2 eV−1, respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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