| Autor: |
Kirilenko, Pavel, Altinkaya, Cesur, Iida, Daisuke, Ohkawa, Kazuhiro |
| Předmět: |
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| Zdroj: |
Crystals (2073-4352); Dec2022, Vol. 12 Issue 12, p1733, 7p |
| Abstrakt: |
We report p-GaN passivation via hydrogen plasma used to create current blocking regions (CBRs) in InGaN-based green LEDs with standard dimensions of 280 × 650 μm2. The CBRs are created before mesa etching in two variants: underneath the opaque metal p-pad and both underneath the p-pad and along the device's mesa perimeter. The peak EQE increased by 13% and 23% in the first and the second cases, respectively, in comparison to the reference LED with no CBR. With a high injection current of 50 A/cm2, the EQE value increased by 2% in the case of CBRs underneath the p-pad as well as by 14% in the case of CBRs both underneath the p-pad and along the mesa perimeter (relative to the reference sample with no CBR). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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