| Autor: |
Kurata, Hideaki, Saeki, Shunichi, Kobayashi, Takashi, Sasago, Yoshitaka, Arigane, Tsuyoshi, Otsuga, Kazuo, Kawahara, Takayuki |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; Feb2005, Vol. 40 Issue 2, p523-531, 9p, 4 Diagrams, 3 Charts, 9 Graphs |
| Abstrakt: |
Constant-charge-injection programming (CCIP) has been proposed as a way to achieve high-speed multilevel programming in flash memories. In order to achieve high programming throughput in multilevel flash memory, programming method must provide: 1) high-speed cell-programming; 2) high programming efficiency; and 3) highly uniform programming characteristics. Conventional source-side channel-hot-electron injection (SSI) programming realizes both fast cell-programming and high programming efficiency, but the large cell-to-cell variation in programming speed with SSI is a problem. CCIP reduces the characteristic variation of SSI programming and satisfies all of the above requirements. By applying CCIP to 2-bit/cell AG-AND flash memory, the high programming throughput of 10.3 MB/s is obtained with no area penalty. This is 1.8 times faster than the throughput with conventional SSI programming. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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