| Abstrakt: |
The implantation of ions in Si with an energy of E0 = 1 keV followed by annealing at 850–900 K yielded nanocluster phases and SiO2 films. Using Auger-electron spectroscopy, spectroscopy of elastically reflected slow electrons, and ultraviolet photoelectron spectroscopy, the composition, formation depths, and electronic structure of nanocluster phases and SiO2 layers are studied. It is found that nanocluster phases and layers of SiO2 at doses of D ≤ 5 × 1015 cm–2 are formed in the surface layer at a depth of 25–30 Å. With an increase in the ion dose, the SiO2-oxide layer shifts towards the surface, and at D ≈ 6 × 1016 cm–2, a continuous SiO2 film with a thickness of ~25–30 Å is formed. The band gap of this film is 7.9 eV. [ABSTRACT FROM AUTHOR] |
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