An Energy-Efficient BJT-Based Temperature Sensor with ±0.8 °C (3 σ) Inaccuracy from −50 to 150 °C.

Autor:	Qin, Chuyun, Huang, Zhenyan, Liu, Yuyan, Li, Jiping, Lin, Ling, Tan, Nianxiong, Yu, Xiaopeng
Předmět:	TEMPERATURE sensors OPERATIONAL amplifiers COMPLEMENTARY metal oxide semiconductors
Zdroj:	Sensors (14248220); Dec2022, Vol. 22 Issue 23, p9381, 14p
Abstrakt:	This article presents an energy-efficient BJT-based temperature sensor. The output of sensing front-ends is modulated by employing an incremental Δ - Σ ADC as a readout interface. The cascoded floating-inverter-based dynamic amplifier (FIA) is used as the integrator instead of the conventional operational transconductance amplifier (OTA) to achieve a low power consumption. To enhance the accuracy, chopping and dynamic element matching (DEM) are applied to eliminate the component mismatch error while β -compensation resistor and optimized bias current are used to minimize the effect of β variation. Fabricated in a standard 180-nm CMOS process, this sensor has an active area of 0.13 mm 2 . While dissipating only 45.7 μ W in total, the sensor achieves an inaccuracy of ±0.8 °C (3 σ) from −50 °C to 150 °C after one-point calibration. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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