| Autor: |
Kwak, Hyunsoo, Ahn, Changmin, Na, Yongjin, Bae, Jinho, Kim, Jungwon |
| Zdroj: |
IEEE Photonics Journal; Oct2022, Vol. 14 Issue 5, p1-8, 8p |
| Abstrakt: |
Three-dimensional integrated circuits (3D-ICs) are becoming more significant in portable devices, autonomous vehicles, and data centers. As the demand for highly integrated and high-performance semiconductor devices grows, recent 3D integration technologies focus on lowering the size of the micro-structures on such devices for high density. In order to inspect the 3D semiconductor devices, it is critical to measure the heights, depths, and overall surface profiles of the micro-structures made with silicon materials. Here, we demonstrate precise surface imaging for silicon devices by using a femtosecond mode-locked laser centered at 785 nm wavelength and an electro-optic sampling-based time-of-flight detection method with sub-10-nanometer axial precision. We could successfully measure the surface profiles as well as the step heights of silicon wafer stacks and micro-scale structures on silicon substrates. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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