A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components.

Autor:	Wang, Kewei, Zhang, Xinyi, Li, Bo, Li, Duoli, Zhao, Fazhan, Bu, Jianhui, Han, Zhengsheng
Předmět:	SINGLE event effects TRANSISTORS BIPOLAR transistors METAL oxide semiconductor field-effect transistors VOLTAGE COMPUTER-aided design SILICON
Zdroj:	Electronics (2079-9292); Dec2022, Vol. 11 Issue 23, p4022, 11p
Abstrakt:	FDSOI (Fully Depleted Silicon On Insulator) devices have a good performance in anti-single-event circuits. However, the bipolar amplification effect becomes a severe problem due to the buried oxide. The previous models for Single Event Transient (SET) of FDSOI did not fully consider the current of all components. Most importantly, they did not take the influence of the back-gate voltage into account. Thus, this paper presents a modeling method for the SET current in FDSOI MOSFET where all three components are modeled individually. The prompt current and diffusion current are modeled with a current source respectively. The Berkeley Short-channel IGFET Model for Silicon-on-Insulator (BSIMSOI) model is integrated into this model to calculate the bipolar amplification current. Compared to using the bipolar transistor model, this method avoids additional current input from the base electrode. It is more consistent with the mechanism of bipolar amplification effect for FDSOI devices without body contact. Instantaneously, an improved model is proposed that considers the influence of the back-gate voltage on the SET of the FDSOI devices. All models are validated through Technology Computer Aided Design (TCAD)simulation results. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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