| Autor: |
Wang, Fengjuan, Ren, Ruinan, Yin, Xiangkun, Yu, Ningmei, Yang, Yuan |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Components, Packaging & Manufacturing Technology; Oct2022, Vol. 12 Issue 10, p1645-1652, 8p |
| Abstrakt: |
A high-density symmetrical transformer based on through-silicon via (TSV) is proposed in this article. The primary winding and secondary winding have strong symmetry, and the inductance mismatch is less than 0.1%, so the transformer structure is suitable for differential circuit. Compared with transformers in other literatures, the proposed transformer has advantages in area and efficiency, which is reflected in that the on-chip area is greatly reduced by 58% to 89%, and the coupling coefficient can reach more than 0.92. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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