| Autor: |
Tang, Shun-Wei, Huang, Zhen-Hong, Chen, Szu-Chia, Lin, Wei-Syuan, de Jaeger, Brice, Wellekens, Dirk, Borga, Matteo, Bakeroot, Benoit, Decoutere, Stefaan, Wu, Tian-Li |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Oct2022, Vol. 43 Issue 10, p1625-1628, 4p |
| Abstrakt: |
In this work, we demonstrate enhancement-mode regrown p-GaN gate devices with high threshold voltage as well as a robust forward time-dependent gate breakdown (TDGB) stability. The regrown p-GaN gate HEMTs are fabricated with two different AlGaN barriers. Devices with 16nm Al0.235 Ga0.765 N yield a $\text{V}_{\text {TH}}$ of 1.5V and a high threshold voltage ($\text{V}_{\text {TH}}$) of 2.7V is observed for 7nm AlGaN along with a gate breakdown voltage of more than 10V. Lastly, the regrown p-GaN gate HEMTs with 7nm AlGaN barrier demonstrate an operating $\text{V}_{\text {G}}$ of 7.46V and 7V for 1% failure rate of 10-year lifetime at 150°C and 25°C, which is amongst the highest values compared to the reported literature for regrown p-GaN gate HEMTs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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