| Autor: |
Wang, Yuxuan, Li, Guanyu, Gu, Xiaowen, Kong, Yuechan, Zhang, Rong, Zheng, Youdou, Shi, Yi |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Oct2022, Vol. 43 Issue 10, p1689-1692, 4p |
| Abstrakt: |
In this letter, we present a photoreceiver front-end circuit that consists of an InP p-i-n photodetector (PIN PD) on an InP transimpedance amplifier (TIA) with double HBTs (DHBTs), in which the key integrated fabrication route of a transfer-printing (TP) process is introduced. Prior to integration, PDs and TIAs are individually fabricated on their respective wafers. Then, a discrete PD with only active layers is transferred onto the destination on a TIA wafer, thereafter, an on-chip coplanar waveguide connection is integrated. The PIN PD and DHBT TIA exhibit excellent performance, characterized by a responsivity of 0.51 A/W at $1.55~\mu \text{m}$ with a bandwidth of 20 GHz and a transimpedance gain of 36 dB $\Omega $ with a bandwidth of 27 GHz, respectively. Finally, the monolithically integrated circuit demonstrates a better frequency response by maximally reducing the parasitic effect, with an open clear eye diagram under a 20 Gb/s nonreturn-to-zero pattern, which evidently manifests its ability for ultrahigh-rate data operation. The present work, by employing a TP process, overcomes the issues in integrating discrete optoelectronic devices and proposes a unique approach for monolithic optoelectronic integrated circuit fabrication. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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