| Autor: |
Goswami, Sudipta, Mishra, Shubhankar, Dana, Kausik, Kumar Mandal, Ashok, Dey, Nitai, Pal, Prabir, Satpati, Biswarup, Mukhopadhyay, Mrinmay, Kumar Ghosh, Chandan, Bhattacharya, Dipten |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/7/2022, Vol. 132 Issue 21, p1-9, 9p |
| Abstrakt: |
Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO3 thin films (space group P n a 2 1), grown on economic and technologically important (100)Si substrates by a pulsed laser deposition technique. Structural analysis and comprehensive mapping of the Ga:Fe ratio across a length scale range of 104 reveals coexistence of epitaxial and chemical strain. It induces formation of finer magnetic domains and large magnetoelectric coupling—a decrease in remanent polarization by ∼ 21 % under ∼ 50 kOe. Magnetic force microscopy reveals the presence of both finer (< 100 nm) and coarser (∼ 2 μ m) magnetic domains. Strong multiferroicity in epitaxial GaFeO3 thin films, grown on a (100)Si substrate, brighten the prospect of their integration with Si-based electronics and could pave the way for development of economic and more efficient electromechanical, electrooptic, or magnetoelectric sensor devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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