| Autor: |
Gandhi, S. Girish, Govardhani, I., Narayana, M. Venkata, Rao, K. Srinivasa |
| Předmět: |
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| Zdroj: |
Microsystem Technologies; Dec2022, Vol. 28 Issue 12, p2765-2774, 10p |
| Abstrakt: |
In this paper, SP4T (Single Pole four throw) type RF MEMS Switch is designed for Satellite applications. The beam thickness of the switch is varying from 1 μm, 1.5 μm, and 2 μm. The capacitive and series beam is designed with 3 models. The device is a combination of series and shunt made up of 4 capacitive switches and 4 series switches. By using the COMSOL Multiphysics tool, we obtained the series switch has 8.9 V pull-in voltage and the shunt switch has 10 V at a beam thickness of 1 μm and the related capacitance ratio is 112. Using the HFSS method, performance analysis is found to achieve isolation and insertion loss at 62 dB and 0.4 dB at 14 GHz. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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