| Autor: |
Daulton, J. W., Molnar, R. J., Brinkerhoff, J. A., Hollis, M. A., Zaslavsky, A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/28/2022, Vol. 121 Issue 22, p1-5, 5p |
| Abstrakt: |
III-nitride-based hot electron transistors (HETs) offer a significant promise as high-speed, high-power devices, but their performance has been limited to below that of competing technologies. Here, we report on a HET with current density > 440 kA/cm2 and common-emitter current gain >20. Polarization engineering of the emitter stack was used to allow for high-current collimated electron injection from the emitter with relatively low turn-on voltage. The use of only polarization charge in the undoped 10 nm-thick base allowed for high gain through minimization of scattering with atomic layer etching contact fabrication used to lower base access resistance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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