| Autor: |
Karg, A., Kracht, M., Vogt, P., Messow, A., Braud, N., Schörmann, J., Rohnke, M., Janek, J., Falta, J., Eickhoff, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/21/2022, Vol. 132 Issue 19, p1-9, 9p |
| Abstrakt: |
The tin-enhanced growth of G a 2 O 3 on (0001) A l 2 O 3 by plasma-assisted molecular beam epitaxy using an ultrathin δ -layer of Sn O 2 is demonstrated. It is shown that this growth method results in a significantly reduced incorporation of residual Sn in the G a 2 O 3 film compared to the case of permanent Sn-supply. The ultrathin Sn O 2 layer, pre-deposited on the substrate, is sufficient to initiate phase pure growth of ε - G a 2 O 3 in metal-rich growth conditions where otherwise no growth occurs. The chemical and morphological properties of the δ -layer are analyzed and the presence of Sn O 2 on the surface during the entire growth process is demonstrated. Furthermore, we show that this layer is stable during Ga-induced back-etching of a G a 2 O 3 film. Its impact on the kinetics of G a 2 O 3 growth is also discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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