| Autor: |
Jiménez-Molinos, F., Vinuesa, G., García, H., Tarre, A., Tamm, A., Kalam, K., Kukli, K., Dueñas, S., Castán, H., González, M. B., Campabadal, F., Roldán, J. B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/21/2022, Vol. 132 Issue 19, p1-7, 7p |
| Abstrakt: |
TiN/Ti/HfO2/Pt resistive switching devices have been fabricated, measured, and modeled. After programming the devices in the low resistance state, the current–voltage characteristic below the reset switching voltage was measured at different temperatures (from 90 to 350 K). A weak but complex temperature dependence was obtained for several voltage regimes. These memristors belong to a wider set known as valence change memories, whose conductance is determined by the formation of conductive filaments (CFs) linked to a high density of oxygen vacancies in a dielectric sandwiched between two metal electrodes. This usually leads to ohmic conduction in the low resistance state. However, a non-linear current dependence has been also observed in the measured devices, in addition to symmetric current–voltage curves for positive and negative biases in the 0–0.6 V voltage range. Three different thermal dependences have been considered for explaining the whole set of experimental data. Two of them are linked to ohmic filamentary conduction; the CF shows a conductivity enhancement due to thermally activated mechanisms at low temperatures; on the contrary, a CF conductivity degradation is observed at the higher temperatures. Finally, an additional slightly higher value for the non-linear current component as the temperature rises has also been taken into account. A semiempirical compact model has been implemented including these conduction mechanisms and their corresponding temperature dependences, the device has been simulated in LT-Spice and the experimental currents have been correctly reproduced. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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