| Autor: |
Abdullah, Syarah Syazwani, Zain, Mohd Zamzuri Mohammad, Razalli, Nur Nisha Najjini, Marzuki, Marina, Ibrahim, Wan Abd Rahman Assyahid Wan, Jaafar, Muhammad Hasnulhadi Mohammad, Mohamad, Fariza, Izaki, Masanobu |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 11/22/2022, Vol. 2541 Issue 1, p1-6, 6p |
| Abstrakt: |
Zinc Oxide (ZnO) as n-type semiconductor is widely doping with Aluminum as group-III elements because of attracting due to their good electrical properties with reasonably low optical loss. This research was carried out to investigate the influence of Al doping in ZnO bulk thin films by focusing on nanostructural refinement and solid-state reactions for photovoltaic device applications. The Al (3,5,7,9 %) doped in ZnO bulk thin films is synthesized by sol-gel technique. The sol-gel spin coating was used as deposition nanostructured Al-doped ZnO bulk thin film in solid-state reaction followed by annealing at 600˚C. The effect of Al concentrations on the crystal structure, surface morphology andoptical properties were investigated. The structural shows the crystallinity of Al-doped ZnO bulk thin films decrease as the Al content increased due to Alumina oxide (Al2O3) was detected and indexed to (220). The morphology resulting of 9% Al-doped ZnO bulk thin film is more agglomerated. This is indicates that the accumulation of Al causes the surface morphology of ZnO bulk thin films to be improved. 9% Al-doped ZnO bulk thin resulting the highest absorbance spectra and lower bandgap was obtained due to presence of Al2O3. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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