| Autor: |
Amarnath, G., Sharmila, V., Sreenivasulu, Y., Krishna, D., Vinod, A. |
| Zdroj: |
SILICON (1876990X); Nov2022, Vol. 14 Issue 16, p10327-10335, 9p |
| Abstrakt: |
An analytical modelling of electric field and breakdown-voltage characteristics of AlInN/GaN HEMT on silicon substrate with field plate at drain and gate regions is presented. In the model development, GaN buffer and Si substrate regions are treated as depletion regions. The developed model gives deep physical understandings of the electric field and breakdown-voltage characteristics of AlInN/GaN HEMT devices. The avalanche breakdown of a device appears in the vertical interface or edges of lateral field-plate structures. The relationship among vertical and lateral breakdown with respect to analytical modelling is presented. The breakdown characteristics are analyzed with device parameters including thickness of regions, length of field plate and distance between gate and drain. These analytical model characteristics are verified by matching with numerical simulations and are found in good agreement. The developed model can be used as an effective direction for optimization of device to accomplish better performance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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