| Autor: |
Ebrahimi-Darkhaneh, Hadi, Shekarnoush, Mahsa, Arellano-Jimenez, Josefina, Rodriguez, Rodolfo, Colombo, Luigi, Quevedo-Lopez, Manuel, Banerjee, Sanjay K. |
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| Zdroj: |
Journal of Materials Science: Materials in Electronics; Nov2022, Vol. 33 Issue 31, p24244-24259, 16p |
| Abstrakt: |
We investigated the epitaxial growth of Mg-doped Ga2O3 thin films on (0001)-sapphire substrates by pulsed laser deposition (PLD). The thin films were grown on sapphire at 900 °C, with a laser energy of ~ 80 mJ/cm2, under various oxygen partial pressures (PO = 0.01 mT, 10 mT, and 200 mT) using a Ga2O3:Mg(1 mol%) PLD target. The X-ray diffraction, X-ray photoelectron spectroscopy, kelvin probe force microscopy, photoelectron spectroscopy in atmosphere, ultraviolet–visible absorption spectrum, and transmission electron microscopy (TEM) were used to characterize the crystalline nanostructure and doping profile of the as-deposited thin films. The energy band diagram (obtained from the characterization data) reveals a strong shift in the Fermi level (EF) of the Ga2O3:Mg thin films with respect to the undoped Ga2O3 toward the valence band, exhibiting p-type semiconducting behavior. The TEM results show that the films are monocrystalline for both as-deposited pure and Mg-doped Ga2O3. Also, comparing the measured optical band gap between the pure Ga2O3 (EBG ~ 4.85 eV) and Ga2O3:Mg (EBG ~ 5.2 eV) indicates a band gap increase (ΔEBG ~ 0.35 eV) in the doped sample, which can be used for ultraviolet photodetectors and power electronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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