| Autor: |
Dzuba, Brandon, Nguyen, Trang, Sen, Amrita, Diaz, Rosa E., Dubey, Megha, Bachhav, Mukesh, Wharry, Janelle P., Manfra, Michael J., Malis, Oana |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/7/2022, Vol. 132 Issue 17, p1-7, 7p |
| Abstrakt: |
Growth of wurtzite ScxAl1−xN (x < 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc0.18Al0.82N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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