| Autor: |
Uteniyazov, A. K., Ismailov, K. A., Muratov, A. S., Dauletmuratov, B. K., Kamalov, A. B. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2022, Vol. 25 Issue 2, p157-163, 7p |
| Abstrakt: |
The results of studying amplification of photoelectric injection in the Al-Al2O3-p-CdTe-Mo structure at high bias voltages for the forward current have been presented. It has been shown that the spectral sensitivity reaches its maximum value Sλ = 8.4⋅104 A/W, when the diode is illuminated with the "own" light at λ = 450 nm and V = 7 V, while when it is illuminated with the "impurity" light at λ = 950 nm Sλ = 4.3⋅104 A/W under the same bias voltage. It has been ascertained that when illuminating the structure with the "own" light, the positive feedback mechanism is realized, and when illuminating with "impurity" light, the parametric amplification mechanism is realized. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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