| Autor: |
Srinadhu, E. S., Kulkarni, D. D., Field, D. A., Harriss, J. E., Sosolik, C. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/21/2022, Vol. 132 Issue 15, p1-6, 6p |
| Abstrakt: |
We report on nano-patterning with multiply charged argon ions that facilitates the self-assembly of epitaxial Cu 3 Si nanostructures. In particular, we show that the impact sites formed from the dissipation of the incident ion potential energy for Ar q + (q = 1 , 4 , 8) modulate the growth density and growth rate for silicide nanostructures. The observed nanostructure densities were found to vary as q ∼ 0.9 for strain-driven, shape transition-type growth, and the observed growth rates far exceeded those obtained under thermal conditions. Relating the growth density to an underlying sputter yield for SiO 2 , we find a dependence on the ion potential energy relatively similar to that observed by others for I q + ions incident on a thermally grown oxide. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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