Synthesis and property investigation of Er-doped Bi4(Ge0.5Si0.5)3O12 (BGSO): a potential gain medium of C-band laser.

Autor:	Shao, Yueqin, Chen, Yuanzhi, Ma, Zhenzhen, Zhang, Mingjie, Xu, Jiayue, Lu, Junchang, Li, Zhengkai, Zhang, Qingli
Předmět:	ACTIVE medium LASERS STIMULATED emission LUMINESCENCE DOPING agents (Chemistry) SEMICONDUCTOR lasers
Zdroj:	Applied Physics A: Materials Science & Processing; Oct2022, Vol. 128 Issue 10, p1-9, 9p
Abstrakt:	The Er:BGSO polycrystals with different Er3+ ions doping concentrations were successfully prepared by solid-state synthesis method. The phase and structure parameters of these crystals were investigated systematically. The calculation of DFT proves that Bi4(Ge0.5Si0.5)3O12 is the indirect-bandgap material with a bandgap of 3.86 eV. Bi4(Ge0.5Si0.5)3O12 doped with 2 at.% Er3+ ions can suppress the effect of up-conversion luminescence (UCL) effectively, and its stimulated emission cross-section and fluorescence lifetime at 1.5 μm are 2.25 × 10−20 cm2 and 5.19 ms, respectively. In addition, the luminescence of the crystal in the C-band is not sensitive to temperature. The high luminescence intensity, wide emission band, and proper thermal stability indicate that 2 at.%Er:Bi4(Ge0.5Si0.5)3O12 is a potential ideal gain medium of C-band laser. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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