Resilience of monolayer MoS2 memtransistor under heavy ion irradiation.

Autor: Smyth, Christopher M., Cain, John M., Lang, Eric J., Lu, Ping, Yan, Xiaodong, Liu, Stephanie E., Yuan, Jiangtan, Bland, Matthew P., Madden, Nathan J., Ohta, Taisuke, Sangwan, Vinod K., Hersam, Mark C., Hattar, Khalid, Chou, Stanley S., Lu, Tzu-Ming
Zdroj: Journal of Materials Research; Sep2022, Vol. 37 Issue 17, p2723-2737, 15p
Databáze: Complementary Index
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