| Autor: |
Shishkin, Y., Ke, Y., Devaty, R. P., Choyke, W. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/2005, Vol. 97 Issue 4, p044908, 5p, 3 Black and White Photographs, 2 Graphs |
| Abstrakt: |
Porous silicon carbide fabricated from p-type 4H and 6H SiC wafers by electrochemical etching in hydrofluoric electrolyte is studied. An investigation of the dependence on wafer polarity reveals that pore formation is favored on the C face while complete dissolution occurs on the Si face. When the etching is done on the C face, the pore wall thickness decreases with increasing current density. The morphology of the front surface of the sample depends on the prior treatment of the workpiece surface. The porosity is estimated based on the analysis of scanning electron microscope images, charge-transfer calculations, and gravimetric analysis. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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