| Autor: |
Powell, Stephen K., Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, Flynn B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/2005, Vol. 97 Issue 4, p046106, 3p, 1 Chart, 4 Graphs |
| Abstrakt: |
We expand upon previous work [S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C. J. Scozzie, and A. Lelis, J. Appl. Phys. 92, 4053 (2002)] by applying the device model to 6H silicon carbide metal-oxide-semiconductor field-effect transistors operating at high temperatures. We compare the model predictions with the device measurements from room temperature to 200 °C and find agreement. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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