| Autor: |
Yeasmin, Nawshin, Khan, M. K. R., Rahman, M. M., Sarker, M. S. I. |
| Předmět: |
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| Zdroj: |
Journal of Materials Science: Materials in Electronics; Oct2022, Vol. 33 Issue 28, p22244-22255, 12p |
| Abstrakt: |
Nanocrystalline spinel NixZn1−xFe2O4 (x = 0.0, 0.3, 0.5, 0.7) thin films have been deposited on glass substrate at temperature 350 °C via spray pyrolysis from metal nitrate aqueous solution. The thickness of the films ranges from 191 to 203 nm, whereas the average crystallite size ranges from 40 to 37 nm. The X-ray diffraction patterns confirm that the samples are well crystallized in the face-centered cubic spinel structure. Using cation distribution, the variation of theoretical and experimental lattice constant with Ni content is shown explicitly. The results of the optical measurement suggest that the Ni–Zn ferrite thin films are of direct band gap semiconductor and band gap energy varies from 2.50 to 2.23 eV. The Photoluminescence (PL) spectra of Ni–Zn ferrite thin films show that the emissions are due to the defect state transitions. The electrical resistivity for Ni–Zn ferrite thin films was measured as a function of temperature. The Hall constant, mobility, and carrier concentration of Ni–Zn ferrite thin films were calculated from the Hall effect study. It is found that the Ni–Zn ferrites are n-type semiconductor for x = 0.0, 0.3, 0.5 and starts to enter into p-type domain for x = 0.7. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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