Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties.

Autor: Bong Ho Kim, Song-hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Dae-Myeong Geum, Seung-Hyub Baek, Sang Hyeon Kim
Zdroj: Nanoscale Advances; 10/7/2022, Vol. 4 Issue 19, p4114-4121, 8p
Databáze: Complementary Index