Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties.
Autor: | Bong Ho Kim, Song-hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Dae-Myeong Geum, Seung-Hyub Baek, Sang Hyeon Kim |
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Zdroj: | Nanoscale Advances; 10/7/2022, Vol. 4 Issue 19, p4114-4121, 8p |
Databáze: | Complementary Index |
Externí odkaz: |