| Autor: |
Yu, Yong, Xu, Xiao, Wang, Yan, Jia, Baohai, Huang, Shan, Qiang, Xiaobin, Zhu, Bin, Lin, Peijian, Jiang, Binbin, Liu, Shixuan, Qi, Xia, Pan, Kefan, Wu, Di, Lu, Haizhou, Bosman, Michel, Pennycook, Stephen J., Xie, Lin, He, Jiaqing |
| Předmět: |
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| Zdroj: |
Nature Communications; 9/24/2022, Vol. 13 Issue 1, p1-9, 9p |
| Abstrakt: |
Thermoelectrics enable direct heat-to-electricity transformation, but their performance has so far been restricted by the closely coupled carrier and phonon transport. Here, we demonstrate that the quantum gaps, a class of planar defects characterized by nano-sized potential wells, can decouple carrier and phonon transport by selectively scattering phonons while allowing carriers to pass effectively. We choose the van der Waals gap in GeTe-based materials as a representative example of the quantum gap to illustrate the decoupling mechanism. The nano-sized potential well of the quantum gap in GeTe-based materials is directly visualized by in situ electron holography. Moreover, a more diffused distribution of quantum gaps results in further reduction of lattice thermal conductivity, which leads to a peak ZT of 2.6 at 673 K and an average ZT of 1.6 (323–723 K) in a GeTe system. The quantum gap can also be engineered into other thermoelectrics, which provides a general method for boosting their thermoelectric performance. Defects are believed to always scatter carriers. Here, the authors find that the quantum gaps in GeTe-based materials do not scatter carriers, which decouple the carriers and phonons transport leading to high thermoelectric performance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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