Post-metallization annealing and photolithography effects in p-type Ge/Al2O3/Al MOS structures.

Autor: Ioannou-Sougleridis, V., Alafakis, S., Pécz, B., Velessiotis, D., Vouroutzis, N. Z., Ladas, S., Barozzi, M., Pepponi, G., Skarlatos, D.
Zdroj: ECS Journal of Solid State Science & Technology; Apr2022, Vol. 11 Issue 4, p333-342, 10p
Databáze: Complementary Index