Post-metallization annealing and photolithography effects in p-type Ge/Al2O3/Al MOS structures.
Autor: | Ioannou-Sougleridis, V., Alafakis, S., Pécz, B., Velessiotis, D., Vouroutzis, N. Z., Ladas, S., Barozzi, M., Pepponi, G., Skarlatos, D. |
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Zdroj: | ECS Journal of Solid State Science & Technology; Apr2022, Vol. 11 Issue 4, p333-342, 10p |
Databáze: | Complementary Index |
Externí odkaz: |