| Autor: |
Fukaya, Shuhei, Yonezawa, Yoshiyuki, Kato, Tomohisa, Kato, Masashi |
| Předmět: |
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| Zdroj: |
Physica Status Solidi (B); Sep2022, Vol. 259 Issue 9, p1-6, 6p |
| Abstrakt: |
In the development of 4H‐SiC bipolar devices, defect generation during the fabrication process is an important issue for maintaining a long carrier lifetime in the drift layers. Herein, two 4H‐SiC PiN diode structures are produced with a p‐type layer fabricated through epitaxial growth or Al ion implantation; and the current–voltage characteristics and defect distribution observed using deep‐level transient spectroscopy and cathodoluminescence (CL) are compared. The PiN diode fabricated through ion implantation shows higher deep‐level concentrations even at a drift layer depth of ≈6 μm from the junction. In addition, the concentrations at the deep levels decrease with the depth, as does the CL intensity originating from defects. Therefore, defects induced through Al‐ion implantation are distributed into a drift layer with a gradual decrease in the concentration along the depth. These results suggest that drift layers in 4H‐SiC bipolar devices should be fabricated in regions far from the Al‐ion‐implanted regions to induce an efficient conductivity modulation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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