| Autor: |
Rossi, Simone, Talamas Simola, Enrico, Raimondo, Marta, Acciarri, Maurizio, Pedrini, Jacopo, Balocchi, Andrea, Marie, Xavier, Isella, Giovanni, Pezzoli, Fabio |
| Předmět: |
|
| Zdroj: |
Advanced Optical Materials; Sep2022, Vol. 10 Issue 18, p1-8, 8p |
| Abstrakt: |
The Rashba effect in Ge/Si0.15Ge0.85 multiple quantum wells embedded in a p‐i‐n diode is studied through polarization and time‐resolved photoluminescence. In addition to a sizeable redshift arising from the quantum‐confined Stark effect, a threefold enhancement of the circular polarization degree of the direct transition is obtained by increasing the pump power over a 2 kW cm−2 range. This marked variation reflects an efficient modulation of the spin population and is further supported by dedicated investigations of the indirect gap transition. This study demonstrates a viable strategy to engineer the spin‐orbit Hamiltonian through contactless optical excitation and opens the way toward the electro‐optical manipulation of spins in quantum devices based on group‐IV heterostructures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Plný text