Autor: |
Wong, Louis S. Y., Hossain, Shohan, Ta, Andrew, Edvinsson, Jörgen, Rivas, Dominic H., Nääs, Hans |
Předmět: |
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Zdroj: |
IEEE Journal of Solid-State Circuits; Dec2004, Vol. 39 Issue 12, p2446-2456, 11p, 3 Charts, 3 Graphs |
Abstrakt: |
Low power consumption is crucial for medical implant devices. A single-chip, very-low-power interface IC used in implantable pacemaker systems is presented. It contains amplifiers, filters, ADCs, battery management system, voltage multipliers, high voltage pulse generators, programmable logic and timing control. A few circuit techniques are proposed to achieve nanopower circuit operations within submicron CMOS process. Subthreshold transistor designs and switched-capacitor circuits are widely used. The 200 k transistor IC occupies 49 mm2, is fabricated in a 0.5-μm two-poly three-metal multi-Vt process, and consumes 8 μW. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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