| Abstrakt: |
Due to the increasing complexity and miniaturization of microelectronics, material interfaces are now the dominant source of thermal resistance in many integrated circuits and electronic devices. While the literature on thermal boundary resistance is extensive, the theory remains poorly understood. This is particularly true for the case of defects at the interface. Data and results on three defects at a Si|C interface are presented—an interstitial N pair and two different substitutional Ge's. It is found that the interstitial N pair, as well as one of the Ge defects, reduces thermal boundary conductivity considerably whereas the substitutional Ge placed directly at the interface is largely transparent. [ABSTRACT FROM AUTHOR] |
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