| Autor: |
Yang, Gang, Romeo, Pedro Rojo, Apostoluk, Aleksandra, Vilquin, Bertrand |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Sep2022, Vol. 40 Issue 5, p1-7, 7p |
| Abstrakt: |
In this article, lattice thermal conductivity of α-phase Ga2O3 is investigated in a way of combining the first principles calculation and iterative solving the Boltzmann transport equation. Real-space displacement approach is employed in order to obtain both second- and third-order force constants. The effect of the microstructure on lattice thermal conductivity of α-phase Ga2O3 has been extensively studied and widely discussed. The results indicate that α-phase Ga2O3 exhibit a lower thermal conductivity compared with β-phase Ga2O3 in a temperature range from 30 to 800 K. At room temperature, 300 K, the calculated thermal conductivities of α-phase Ga2O3 are 11.61, 9.38, and 8.94 Wm−1 K−1 in the directions [100], [010], and [001], respectively. The lower thermal conductivity of α-phase Ga2O3 can be attributed to the mass difference and bond strength between Ga and O atoms. As for the phonon transport analysis, it is related to the three phonon scattering mechanism. Compared with β-phase Ga2O3, α-phase Ga2O3 exhibits a higher anharmonic phonon scattering rate. Our study aims to help to understand the thermal transport mechanism of α-phase Ga2O3 material and provide useful guidance for the future device applications and enrich the existing state of the art. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
