| Autor: |
Hsieh, E. R., Wang, Z. Y., Ye, Y. H., Wu, Y. S., Huang, C. F., Huang, P. S., Huang, Y. S., Miu, M. L., Su, H. S., Huang, S. Y., Lu, S. M. |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Sep2022, Vol. 43 Issue 9, p1396-1399, 4p |
| Abstrakt: |
We report one sort of weak physical unclonable functions (PUFs) composed of 14-nm nFinFETs with entropy of the random-trap-fluctuation (RTF). After the positive-bias-temperature-instability (PBTI) stress at high temperatures (85 °C ~ 150 °C), the generation of abundant random traps at the interface of gate-dielectric layers and channel efficiently improves cryptographic parameters of nFinFET-PUFs. Results show that bit-error-rates of the MOSAIC plots reduce to 1.4%; average values/standard-deviation of the inter- and intra- Hamming-distance reach 50.28%/1.7% and 0.38%/0.42%, respectively. This work provides an implacable technique to boost characteristics of weak PUFs through combinations of device-reliability and cryptography. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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