| Autor: |
Liu, Yujia, Gradwohl, Kevin-P., Lu, Chen-Hsun, Remmele, Thilo, Yamamoto, Yuji, Zoellner, Marvin H., Schroeder, Thomas, Boeck, Torsten, Amari, Houari, Richter, Carsten, Albrecht, Martin |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/28/2022, Vol. 132 Issue 8, p1-9, 9p |
| Abstrakt: |
We study the critical thickness for the plastic relaxation of the Si quantum well layer embedded in a SiGe/Si/SiGe heterostructure for qubits by plan-view transmission electron microscopy and electron channeling contrast imaging. Misfit dislocation segments form due to the glide of pre-existing threading dislocations at the interface of the Si quantum well layer beyond a critical thickness given by the Matthews–Blakeslee criterion. Misfit dislocations are mostly 60 ° dislocations (b=a/2 <110>) that are split into Shockely partials (b=a/6 <112>) due to the tensile strain field of the Si quantum well layer. By reducing the quantum well thickness below critical thickness, misfit dislocations can be suppressed. A simple model is applied to simulate the misfit dislocation formation and the blocking process. We discuss consequences of our findings for the layer stack design of SiGe/Si/SiGe heterostructures for usage in quantum computing hardware. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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