| Autor: |
Karabanov, Sergey M., Belyakov, Oleg A., Serebryakov, Andrey E., Suvorov, Dmitriy V., Karabanov, Andrey S. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 8/24/2022, Vol. 2487 Issue 1, p1-8, 8p |
| Abstrakt: |
In this work, the studies on the development of three-dimensional visualization of the multicrystalline silicon ingot structure based on the digital image processing of photoluminescence of silicon wafers have been carried out. The study of the internal multicrystalline structure and the defect distribution in the course of the ingot crystallization using classical methods requires much time and destruction of the sample along the growth direction. This is unsuitable for the manufacturing process. In this paper, the results of the analysis of the defect distribution in the direction of silicon crystal growth are presented. The 3D model construction is performed using the MATLAB software environment. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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