| Autor: |
Parent, Elisa, Raphael, Johanna, Kujofsa, Tedi, Ayers, J. E. |
| Předmět: |
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| Zdroj: |
International Journal of High Speed Electronics & Systems; Mar/Dec2022, Vol. 31 Issue 1/4, p1-6, 6p |
| Abstrakt: |
Halide perovskite materials such as FAPbI3 are of great interest for photovoltaic applications and could replace silicon cells if problems of chemical instability, strain and crystal defects are solved. In this paper we present a preliminary modeling study of lattice relaxation in epitaxial FAPbI3 on MAPbClxBr3-x (001). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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