| Autor: |
Wang, Zongti, Huang, Jian, Zhu, Liqi, Zhou, Zhiqi, Zhao, Xuyi, Du, Antian, Yu, Wenfu, Liu, Ruotao, Gong, Qian, Chen, Baile |
| Zdroj: |
Journal of Lightwave Technology; 8/1/2022, Vol. 40 Issue 15, p5157-5162, 6p |
| Abstrakt: |
In this paper, a vertical stacked near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band detector based on InGaAs and In0.53Ga0.47As/GaAs0.5Sb0.5 type-II superlattice (T2SL) is presented. A barrier layer of AlAs0.56Sb0.44 allows the independent working of the two sub-detectors. The InGaAs NIR sub-detector operates under positive bias, while the eSWIR band detector operates under reverse bias. The NIR sub-detector shows a dark current density of 7.35 × 10−5 A/cm2 under the bias of 0.1 V, the responsivity of 0.88 A/W, and a specific detectivity of 4.69 × 1011 cm· Hz1/2/W at 1510 nm. Meanwhile, the dark current density of eSWIR sub-detector is 8.68 × 10−4 A/cm2 under −0.4 V with the corresponding responsivity of 0.21 A/W, and a specific detectivity of 1.85×1010 cm·Hz1/2/W at 2 μm. Furthermore, a single-pixel imaging system is built to demonstrate the capability of dual-band detectors in information capturing and target recognition. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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