| Autor: |
Kohneh Poushi, S. S., Goll, B., Schneider-Hornstein, K., Hofbauer, M., Zimmermann, Horst |
| Zdroj: |
IEEE Photonics Technology Letters; 9/15/2022, Vol. 34 Issue 18, p945-948, 4p |
| Abstrakt: |
This letter presents a new Si CMOS linear-mode avalanche photodiode (APD) based on an electric field distribution formed by field-line crowding. In this structure, a spherical avalanching electric field is enforced by field-line crowding due to the curvature of the half-sphere cathode (n-well). The electric field extends radially and, therefore, the entire low-doped epitaxial layer serves as charge collection zone. This APD can provide high responsivity and bandwidth due to its thick absorption zone and drift-based carrier transport. Measurements using a 675 nm laser source at 200 nW optical power show a maximum bandwidth of 1.6 GHz while the responsivity is 32 A/W. In addition, a maximum responsivity of 3.05 $\times \,\,10^{3}$ A/W at 5 nW optical power is achieved. Due to the high avalanche gain, large bandwidth, and CMOS compatibility without any process modification, this APD is a promising optical detector for many applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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