| Autor: |
Aksoyak, Ibrahim Kagan, Mock, Matthias, Ulusoy, Ahmet Cagri |
| Zdroj: |
IEEE Microwave & Wireless Components Letters; Aug2022, Vol. 32 Issue 8, p979-982, 4p |
| Abstrakt: |
This letter presents a differential two-stage cascode $D$ -band low-noise amplifier (LNA) using IHP’s $0.13~\mu \text{m}$ SiGe BiCMOS technology. Both gain-peaking and noise-reduction techniques are applied, and a proper interstage matching for an improved linearity is implemented and thereby, the best FoM is achieved among the reported silicon-based $D$ -band LNAs up to date. The small-signal gain is 20 dB at 140 GHz with a 3-dB bandwidth of 31 GHz. The LNA exhibits a simulated noise figure of 5.9 dB and an input-referred 1-dB compression point of −19.7 dBm, which demonstrates a leading-edge performance. The total occupied chip area is 0.4 mm2 including the pads, and the LNA core occupies only 0.1 mm2. The proposed differential LNA consumes a total of 31.8 mW from a 2-V supply. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
