| Autor: |
Baker, Alexander A., Engwall, Alison M., Bayu-Aji, Leonardus Bimo, Bae, John H., Shin, Swanee J., Moody, John D., Kucheyev, Sergei O. |
| Předmět: |
|
| Zdroj: |
Coatings (2079-6412); Jul2022, Vol. 12 Issue 7, pN.PAG-N.PAG, 10p |
| Abstrakt: |
Tantalum-based films with tailored composition, density, and electrical resistivity are of interest for next generation hohlraums for magnetized indirect-drive inertial confinement fusion. Here, we use reactive direct-current magnetron sputtering to deposit tantalum suboxide films with O content in the range of 46–71 at.%. In contrast to a common approach involving varying reactive gas contents, compositional control is achieved kinetically by changing the total chamber pressure and the deposition rate, while keeping the working gas mix of Ar-5%O 2 constant. The resultant films are X-ray amorphous with electrical resistivity varying by over seven orders of magnitude. The dominant conduction mechanism changes from metallic to activated tunneling above ∼55 at.% of O, which is characterized by a sharp increase in resistivity and a decrease in the carrier density at low temperatures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
