| Autor: |
Muretova, M. E., Zubov, F. I., Asryan, L. V., Shernyakov, Yu. M., Maximov, M. V., Zhukov, A. E. |
| Předmět: |
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| Zdroj: |
Semiconductors; Apr2022, Vol. 56 Issue 4, p246-252, 7p |
| Abstrakt: |
Using numerical simulation, the search for designs of asymmetric barrier layers (ABLs) in a laser diode with a GaAs waveguide emitting at a wavelength of λ = 980 nm is carried out. A pair of ABLs adjoining the active region on both sides blocks undesired charge-carrier flows and suppresses parasitic spontaneous recombination in the waveguide layers. Optimal designs of ABLs based on AlGaAsSb and GaInP for blocking electrons and holes, respectively, are proposed, which make it possible to reduce the parasitic recombination current down to less than 1% of the initial value. To suppress electron transport, an alternative structure based on three identical AlInAs barriers is also proposed. The GaAsP spacer layers separating these barriers from each other have different thicknesses. Due to this, the set of quasibound (resonant) states is formed in each spacer layer that is different from the set of states of the neighboring spacer layer. As a result, the resonant tunneling channels are blocked, and the parasitic electron flow is reduced by several tens of times in comparison with the case of spacers of identical thickness. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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